Two-Stage Broadband High-Gain W-Band Amplifier Using 0.1-<tex>$mu$</tex>m Metamorphic HEMT Technology-Reference-Cited by-同舟云学术

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Two-Stage Broadband High-Gain W-Band Amplifier Using 0.1-<tex>$mu$</tex>m Metamorphic HEMT Technology

Published:2004-12 Issue:12 Volume:25 Page:766-768
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:en
Short-container-title:IEEE Electron Device Lett.

Author:

Lee B.-H.,An D.,Lee M.-K.,Lim B.-O.,Kim S.-D.,Rhee J.-K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/29861/01362768.pdf?arnumber=1362768

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3. Assessment of Thermal Impact on Performance of Metamorphic High-Electron-Mobility Transistors on Polymer Substrates Using Flip-Chip-on-Board Technology;Applied Physics Express;2013-12-01

4. High RF performance improvement using surface passivation technique of AlGaN/GaN HEMTs at K‐band application;Electronics Letters;2013-08

5. 1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition;Journal of Central South University;2012-12

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