1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition
Author:
Publisher
Springer Science and Business Media LLC
Subject
Metals and Alloys,General Engineering
Link
http://link.springer.com/content/pdf/10.1007/s11771-012-1427-1.pdf
Reference21 articles.
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2. SMITH P M, LIU S M J, KAO M Y, HO P, WANG S C, DUH K H G, FU S T, CHAO P C. W-band high efficiency InP-based power HEMT with 600 GHz f max [J]. IEEE Microw Guided Wave Lett, 1995, 5(7): 230–232.
3. LEE Kang-sung, KIM Young-su, HONG Yun-ki, JEONG Yoon-ha. 35-nm zigzag T-gate In0.52Ga0.48As/In0.53Ga0.47As metamorphic GaAs HEMTs with an ultrahigh t max of 520GHz [J]. IEEE Electron Device Lett, 2007, 28(8): 672–675.
4. CHOU Y C, LEUNG D L, BIEDENBENDER M, ENG D C, BUTTARI D, MEI X B, LIN C H, TSAI R S, LAI R, BARSKY M E, WOJTOWICZ M, OKI A K, BLOCK T R. High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates [C]// Indium Phosphide & Related Materials (IPRM), 2010 International Conference, Kagawa, 2010: 1–4.
5. DEAL W R, LEONG K, MEI X B, SARKOZY S, RADISIC V, LEE J, LIU P H, YOSHIDA W, ZHOU J, LANGE M. Scaling of InP HEMT cascade integrated circuits to THz frequencies [C]// Compound Semiconductor Integrated Circuit Symposium (CSICS), Monterey, 2010:1–4.
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