A Comparison of Short-Circuit Failure Mechanisms of 1.2 kV 4H-SiC MOSFETs and JBSFETs
Author:
Affiliation:
1. State University of New York Polytechnic Institute,College of Nanoscale Science and Engineering,Albany,NY,USA,12203
Funder
U.S. Department of Energy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9955039/9955045/09955302.pdf?arnumber=9955302
Reference11 articles.
1. Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation
2. An Optimal Design for 1.2kV 4H-SiC JBSFET (Junction Barrier Schottky Diode Integrated MOSFET) With Deep P-Well
3. The Optimization of 3.3 kV 4H-SiC JBS Diodes
4. 4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts
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1. Impact of Reverse Current Spreading on Diode Conduction Reliability Of SBD-Embedded SiC MOSFET with Deep P-Shield Structure;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
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