Experimental Demonstration of the Double-Trench, Buried-P JTE Edge Termination with Short Edge Width and High dV/dt Capability for 1200 V-class SiC Devices
Author:
Affiliation:
1. JSAB Technologies (Shenzhen) Ltd.,Shenzhen,China
2. The Hong Kong University of Science and Technology,Department of Electronic and Computer Engineering,Clear Water Bay, Kowloon, Hong Kong,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579614.pdf?arnumber=10579614
Reference13 articles.
1. Characteristics improvement of 4H-SiC using termination with P-Well enclosure in P-Plus floating guard rings for 1700V DMOSFETs
2. Planar Edge Termination Design and Technology Considerations for 1.7-kV 4H-SiC PiN Diodes
3. Junction Termination Extension Implementing Drive-in Diffusion of Boron for High-Voltage SiC Devices
4. A novel edge termination for high voltage SiC devices
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