Advanced PVD buffers on the road to GW-scale CIGSSe production
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7701171/7749395/07749853.pdf?arnumber=7749853
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of oxygen content on the properties of In2(OxS1−x)3 used as buffer material in Cu(In,Ga)Se2 solar cells;Journal of Applied Physics;2024-02-15
2. Beyond 20% World Record Efficiency for Thin-Film Solar Modules;IEEE Journal of Photovoltaics;2024-01
3. RbF-related post-deposition treatments on Cu(In,Ga)(S,Se)2 absorbers: The role of the chalcogen atmosphere;Applied Surface Science;2023-03
4. Investigating the origin of the N1 signature in admittance spectroscopy of Cu(In,Ga)(S,Se)2 thin-film solar cells by a variation of individual cell layers;Thin Solid Films;2022-10
5. Which Parameters Determine the Low-Light Behaviour of CIGSSe-Based Thin-Film Solar Cells?;Frontiers in Energy Research;2022-09-05
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