Ideal GaP/Si heterostructures grown by MOCVD: III-V/active-Si subcells, multijuntions, and MBE-to-MOCVD III-V/Si interface science-Reference-Cited by-同舟云学术

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Ideal GaP/Si heterostructures grown by MOCVD: III-V/active-Si subcells, multijuntions, and MBE-to-MOCVD III-V/Si interface science

Published:2013-06 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)
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Author:

Ringel S. A.,Carlin J. A.,Grassman T.J.,Galiana B.,Carlin A.M.,Ratcliff C.,Chmielewski D.,Yang L.,Mills M.J.,Mansouri Al,Bremner S. P.,Ho-Baillie A.,Hao X.,Mehrvarz H.,Conibeer G.,Green M. A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6731006/6744078/06745175.pdf?arnumber=6745175

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Methods for Integration of III-V Compound and Silicon Multijunction for High Efficiency Solar Cell Design;Silicon;2022-02-07

2. Topical review: pathways toward cost-effective single-junction III–V solar cells;Journal of Physics D: Applied Physics;2021-12-03

3. Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers;Journal of Crystal Growth;2020-02

4. 15.3%-Efficient GaAsP Solar Cells on GaP/Si Templates;ACS Energy Letters;2017-08-02

5. The realistic energy yield potential of GaAs-on-Si tandem solar cells: a theoretical case study;Optics Express;2015-03-20

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