Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology-Reference-Cited by-同舟云学术

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Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology

Published:2016-06 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
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Author:

Williams Joshua J.,McFavilen Heather,Fischer Alec M.,Ding Ding,Young Steven R.,Vadiee Ehsan,Ponce Fernando A.,Arena Chantal,Honsberg Christiana B.,Goodnick Stephen M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7701171/7749395/07749576.pdf?arnumber=7749576

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-Based solar cells;Materials Today Energy;2023-01

2. Solar Cells Operating under Thermal Stress;Cell Reports Physical Science;2020-12

3. InGaN/GaN multi‐quantum‐well solar cells under high solar concentration and elevated temperatures for hybrid solar thermal‐photovoltaic power plants;Progress in Photovoltaics: Research and Applications;2020-08-16

4. Observation and mitigation of RF-plasma-induced damage to III-nitrides grown by molecular beam epitaxy;Journal of Applied Physics;2019-07-07

5. Assessing high-temperature photovoltaic performance for solar hybrid power plants;Solar Energy Materials and Solar Cells;2018-08

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