2.0–2.1 eV Ga<inf>x</inf>In<inf>1−x</inf>P solar cells grown on relaxed GaAsP step grades-Reference-Cited by-同舟云学术

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2.0–2.1 eV GaxIn1−xP solar cells grown on relaxed GaAsP step grades

Published:2010-06 Issue: Volume: Page:
ISSN:
Container-title:2010 35th IEEE Photovoltaic Specialists Conference
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Author:

Steiner Myles A.,France Ryan M.,Wanlass Mark W.,Geisz John F.,Olavarria Waldo J.,Carapella Jeffrey J.,Duda Anna,Romero Manuel J.,Ost Carl R.,Ciszek Paul,Kuciauskas Darius

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5604820/5614036/05616261.pdf?arnumber=5616261

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and characterization of thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy;Semiconductor Science and Technology;2014-02-12

2. Reduction of crosshatch roughness and threading dislocation density in metamorphic GaInP buffers and GaInAs solar cells;Journal of Applied Physics;2012-05-15

3. Molecular beam epitaxy of metamorphic InyGa1−yP solar cells on mixed anion GaAsxP1−x/GaAs graded buffers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-05

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