Comprehensive Study of Optical Float-Zone Grown Gallium Oxide Schottky Barrier Diode-Reference-Cited by-同舟云学术

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Comprehensive Study of Optical Float-Zone Grown Gallium Oxide Schottky Barrier Diode

Published:2023-11-28 Issue: Volume:55 Page:1-6
ISSN:
Container-title:2023 9th IEEE India International Conference on Power Electronics (IICPE)
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Author:

Sahoo Jyotiranjan¹,Vijayakumar P.²,Saquib Taha¹,Suganya M.³,Ganesamoorthy S.⁴,Muralidharan Rangarajan¹,Nath Digbijoy N¹

Affiliation:

1. Indian Institute of Science,Bangalore,India

2. Indira Gandhi Centre for Atomic Research,Kalpakkam,India

3. Institute of Physics, Academia Sinica,Taipei,Taiwan

4. Homi Bhabha National Institute, India, Indira Gandhi Centre for Atomic Research,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10474596/10474612/10474927.pdf?arnumber=10474927

Reference15 articles.

1. State-of-the-art technologies of gallium oxide power devices

2. Semiconductors for high‐voltage, vertical channel field‐effect transistors

3. Current status of Ga203 power devices;Higashiwaki;Japanese Journal of Applied Physics,2016

4. On the feasibility of p-type Ga2O3

5. 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2

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