Horizontal, Stacked or Vertical Silicon Nanowires: Does it Matter from a Low-Frequency Noise Perspective?-Reference-Cited by-同舟云学术

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Horizontal, Stacked or Vertical Silicon Nanowires: Does it Matter from a Low-Frequency Noise Perspective?

Published:2020-09-01 Issue: Volume: Page:
ISSN:
Container-title:2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
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Author:

Simoen Eddy,de Oliveira Alberto Vinicius,Der Agopian Paula Ghedini,Ritzenthaler Romain,Mertens Hans,Horiguchi Naoto,Martino Joao Antonio,Claeys Cor,Veloso Anabela

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9365069/9365279/09365338.pdf?arnumber=9365338

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Y-function based strategy for parameter extraction in S/D asymmetric architecture devices and low frequency noise characterization in GAA Si VNW pMOSFETs;Solid-State Electronics;2023-11

2. Discussion on the Main Mechanisms Contributing to the 1/f Noise in GAA Si VNW pMOSFETs;2023 International Conference on Noise and Fluctuations (ICNF);2023-10-17

3. Fluoride ion and hydrofluoric acid detection via silicon nanosheet field-effect transistor sensor;Sensors and Actuators B: Chemical;2023-10

4. Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures;IEEE Transactions on Electron Devices;2021-07

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