Author:
Candelori A.,Schramm A.,Bisello D.,Contarato D.,Fretwurst E.,Lindstrom G.,Rando R.,Wyss J.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Cited by
11 articles.
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1. Frequency dependence studies on the interface trap density and series resistance of HfO2 gate dielectric deposited on Si substrate: Before and after 50MeV Li3+ ions irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-12
2. Investigation of the interface trap density and series resistance of a high-kHfO2-based MOS capacitor: before and after 50 MeV Li3+ion irradiation;Radiation Effects and Defects in Solids;2011-02
3. Epitaxial silicon detectors for particle tracking—Radiation tolerance at extreme hadron fluences;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-11
4. Irradiation effects on thin epitaxial silicon detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-11
5. Radiation tolerant semiconductor sensors for tracking detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-09