An Analog Circuit for Accurate OCVD Measurements
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx5/19/4505412/04450600.pdf?arnumber=4450600
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup;IEEE Transactions on Electron Devices;2021-07
2. Radiation Defects and Carrier Lifetime in 4H‐SiC Bipolar Devices;physica status solidi (a);2021-06-25
3. Open‐circuit voltage decay: moving to a flexible method of characterisation;IET Circuits, Devices & Systems;2020-10
4. Open-Circuit Voltage Decay Simulations on Silicon and Gallium Arsenide p-n Homojunctions: Design Influences on Bulk Lifetime Extraction;Microelectronics Journal;2020-07
5. An open circuit voltage decay system for performing injection dependent lifetime spectroscopy;Review of Scientific Instruments;2017-09
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