Performance of a new Schottky CdTe detector for hard X-ray spectroscopy

Author:

Matsumoto C.,Takahashi T.,Takizawa K.,Ohno R.,Ozaki T.,Mori K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Cited by 111 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Tracking a moving point source using triple gamma imaging;Journal of Instrumentation;2024-01-01

2. Effect of Electron Irradiation on Spectroscopic Properties of Schottky Barrier CdTe Semiconductor Detectors;High-Z Materials for X-ray Detection;2023

3. Simulations and analysis of fluorescence effects in semiconductor x-ray and gamma-ray detectors;Medical Imaging 2022: Physics of Medical Imaging;2022-04-04

4. Polarization effect of Schottky-barrier CdTe semiconductor detectors after electron irradiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2022-03

5. In and Al Schottky Contacts Comparison on P-Type Chlorine-Doped CdTe;Sensors;2021-04-15

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