Robust and Area Efficient 4H-SiC 1.2 and 3.3 kV Floating Field Ring (FFR) and Trench-FFR Termination Designs and Analysis-Reference-Cited by-同舟云学术

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Robust and Area Efficient 4H-SiC 1.2 and 3.3 kV Floating Field Ring (FFR) and Trench-FFR Termination Designs and Analysis

Published:2023-10-29 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Energy Conversion Congress and Exposition (ECCE)
language:
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Author:

Melnyk Kyrylo¹,Gammon Peter Michael¹,Renz Arne Benjamin¹,Cao Quize¹,Lophitis Neophytos²,Antoniou Marina¹

Affiliation:

1. University of Warwick,School of Engineering,Coventry,United Kingdom

2. University of Nottingham,Faculty of Engineering,Nottingham,United Kingdom

Funder

Innovate UK

Horizon Europe

Royal Society

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10361838/10361943/10362098.pdf?arnumber=10362098

Reference15 articles.

1. Analysis of SI IGBT and SIC MOSFET three phase inverter technologies in HEV, P-HEV and EV applications

2. A 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance

3. Overview of high voltage sic power semiconductor devices: development and application

4. A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs

5. A new analytic method to design multiple floating field limiting rings of power devices

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance;IEEE Transactions on Electron Devices;2024-09

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