Effect of intermetallic formation on electromigration reliability of TSV-microbump joints in 3D interconnect-Reference-Cited by-同舟云学术

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Effect of intermetallic formation on electromigration reliability of TSV-microbump joints in 3D interconnect

Published:2012-05 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE 62nd Electronic Components and Technology Conference
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Author:

Wang Yiwei,Chae Seung-Hyun,Dunne Rajiv,Takahashi Yoshimi,Mawatari Kazuaki,Steinmann Philipp,Bonifield Tom,Jiang Tengfei,Im Jay,Ho Paul S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6241679/6248788/06248849.pdf?arnumber=6248849

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research Status and Progress On Non-Destructive Testing Methods for Defect Inspection of Microelectronic Packaging;Journal of Electronic Packaging;2023-12-21

2. Reliability study of fine pitch Cu-Sn micro-bump structure electromigration test by Finite Element Simulation;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08

3. Advanced Under-Bump-Metal Scaling Solder Micro-Bump Interconnect Down to 10μm Pitch;2022 International Conference on Electronics Packaging (ICEP);2022-05-11

4. Numerical Investigation on Microfluidic Electroless Deposition for Uniform Copper Pillar Microbumps Interconnection;2021 IEEE 71st Electronic Components and Technology Conference (ECTC);2021-06

5. Fundamentals of Solder Alloys in 3D Packaging;3D Microelectronic Packaging;2020-11-24

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