TCAD Simulation on FinFET n-type Power Device HCI Reliability Improvement-Reference-Cited by-同舟云学术

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TCAD Simulation on FinFET n-type Power Device HCI Reliability Improvement

Published:2019-03 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Zhu B.,Bazizi E. M.,Tng J.H.M.,Li Z.,Banghart E. K.,Hassan M. K.,Hu Y.,Zhou D.,Choi D.,Qin L.,Wan X.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8712125/8720395/08720558.pdf?arnumber=8720558

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on the regulation factors and mechanism of self-heating effects in non-rectangular 14 nm bulk FinFET^*;Semiconductor Science and Technology;2024-08-14

2. Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130nm to 28nm Nodes and Beyond;IEEE Transactions on Device and Materials Reliability;2024-06

3. Using U-Net convolutional neural network to model pixel-based electrostatic potential distributions in GaN power MIS-HEMTs;Scientific Reports;2024-04-08

4. Low Frequency Noise and Hot Carrier Degradation Characteristics on 55nm LP Platform;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

5. NeuralTree: A 256-Channel 0.227-μJ/Class Versatile Neural Activity Classification and Closed-Loop Neuromodulation SoC;IEEE Journal of Solid-State Circuits;2022-11

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