Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors-Reference-Cited by-同舟云学术

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Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors

Published:2018-03 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Grasser T.,Stampfer B.,Waltl M.,Rzepa G.,Rupp K.,Schanovsky F.,Pobegen G.,Puschkarsky K.,Reisinger H.,O'Sullivan B.,Kaczer B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8345372/8353529/08353540.pdf?arnumber=8353540

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