Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays-Reference-Cited by-同舟云学术

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Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays

Published:2010 Issue: Volume: Page:
ISSN:
Container-title:2010 IEEE International Reliability Physics Symposium
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Author:

Compagnoni Christian Monzio,Miccoli Carmine,Mottadelli Riccardo,Beltrami Silvia,Ghidotti Michele,Lacaita Andrea L.,Spinelli Alessandro S.,Visconti Angelo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5482567/5488659/05488762.pdf?arnumber=5488762

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Distributed Cycling in Charge Trap-Based 3D NAND Arrays: Model and Qualification Tests Implications;2023 IEEE International Memory Workshop (IMW);2023-05

2. DMMC: A Polar Code Construction Method for Improving Performance in TLC NAND Flash;IEEE Embedded Systems Letters;2023

3. NAND Flash Memory and Its Place in IoT;2021 32nd Irish Signals and Systems Conference (ISSC);2021-06-10

4. A Theoretical Framework for Trap Generation and Passivation in NAND Flash Tunnel Oxide During Distributed Cycling and Retention Bake;2021 IEEE International Reliability Physics Symposium (IRPS);2021-03

5. Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash;IEEE Journal of the Electron Devices Society;2021

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