A physics-based model of the dielectric breakdown in HfO2 for statistical reliability prediction
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IEEE
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http://xplorestaging.ieee.org/ielx5/5776767/5784429/05784582.pdf?arnumber=5784582
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dielectric breakdown of oxide films in electronic devices;Nature Reviews Materials;2024-08-07
2. Elucidating Postprogramming Relaxation in Multilevel Cell‐Resistive Random Access Memory by Means of Experimental and Kinetic Monte Carlo Simulation Data;physica status solidi (a);2022-05-06
3. Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects;Applied Physics Express;2021-11-10
4. Understanding of Selector‐Less 1S1R Type Cu‐Based CBRAM Devices by Controlling Sub‐Quantum Filament;Advanced Electronic Materials;2020-08-06
5. Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach;Journal of Physics D: Applied Physics;2020-04-02
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