Elucidating Postprogramming Relaxation in Multilevel Cell‐Resistive Random Access Memory by Means of Experimental and Kinetic Monte Carlo Simulation Data-Reference-Cited by-同舟云学术

Elucidating Postprogramming Relaxation in Multilevel Cell‐Resistive Random Access Memory by Means of Experimental and Kinetic Monte Carlo Simulation Data

Published:2022-05-06 Issue:13 Volume:219 Page:2100753
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Reganaz Lucas¹^ORCID,Esmanhotto Eduardo¹,Ait Abdelkader Nazim²,Minguet Lopez Joel¹,Castellani Niccolo¹,Rafhay Quentin²,Deleruyelle Damien³,Grenouillet Laurent¹,Aussenac Francois¹,Vianello Elisa¹,Andrieu François¹,Molas Gabriel¹

Affiliation:

1. CEA LETI Minatec Campus, 17 Rue des Martyrs F-38054 Grenoble France

2. IMEP-LAHC 3 Parvis Louis Néel F-38016 Grenoble France

3. INL CNRS INSA Lyon 7 avenue Jean Capelle F-69621 Villeurbanne France

Funder

European Commission

Région Auvergne-Rhône-Alpes

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100753

Reference53 articles.

1. O.Golonzka U.Arslan P.Bai M.Bohr O.Baykan Y.Chang A.Chaudhari A.Chen J.Clarke C.Connor N.Das C.English T.Ghani F.Hamzaoglu P.Hentges P.Jain C.Jezewski I.Karpov H.Kothari R.Kotlyar B.Lin M.Metz J.Odonnell D.Ouellette J.Park A.Pirkle P.Quintero D.Seghete M.Sekhar A. D.Gupta et al. presented at Symp. on VLSI Technology Kyoto Japan June 2019 pp.T230–T231.

2. P.Jain U.Arslan M.Sekhar B. C.Lin L.Wei T.Sahu J.Alzate-vinasco A.Vangapaty M.Meterelliyoz N.Strutt A. B.Chen P.Hentges P. A.Quintero C.Connor O.Golonzka K.Fischer F.Hamzaoglu presented at IEEE Inter. Solid- State Circuits Conf. - (ISSCC) San Francisco CA February 2019 pp.212–214.

3. S.Ito Y.Hayakawa Z.Wei S.Muraoka K.Kawashima H.Kotani K.Kouno M.Nakamura G. A.Du J. F.Chen S. P. L.Yeoh M. H.Y.Chen T.Mikawa S.Yoneda presented at IEEE Inter. Memory Workshop (IMW) Kyoto May 2018 pp.1–4.

4. Y.Hayakawa A.Himeno R.Yasuhara W.Boullart E.Vecchio T.Vandeweyer T.Witters D.Crotti M.Jurczak S.Fujii S.Ito Y.Kawashima Y.Ikeda A.Kawahara K.Kawai Z.Wei S.Muraoka K.Shimakawa T.Mikawa S.Yoneda presented at Symp. on VLSI Technology (VLSI Technology) Kyoto June 2015 pp.T14–T15.

5. C.‐C.Chou Z.‐J.Lin C.‐A.Lai C.‐I.Su P.‐L.Tseng W.‐C.Chen W.‐C.Tsai W.‐T.Chu T.‐C.Ong H.Chuang Y.‐D.Chih T.‐Y. J.Chang presented at IEEE Symp. on VLSI Circuits Honolulu HI June 2020 pp.1–2.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

2. A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03