Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs-Reference-Cited by-同舟云学术

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Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs

Published:2012-04 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Toledano-Luque M.,Kaczer B.,Simoen E.,Degraeve R.,Franco J.,Roussel Ph. J.,Grasser T.,Groeseneken G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6235191/6241755/06241935.pdf?arnumber=6241935

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