Author:
Martin-Martinez J.,Rodriguez R.,Nafria M.
Publisher
Springer International Publishing
Reference56 articles.
1. M.J. Kirton, M.J. Uren, Noise in solid-state microstructures: a new perspective on individual defects, interface states and low-frequency (1/f) noise. Adv. Phys. 38(4), 367–468 (1989)
2. K.R. Farmer, Discrete conductance fluctuations and related phenomena in metal-oxide-silicon device structures, in Proc. Insulating Films on Semiconductors, 1991, pp. 1–18
3. E. Simoen, C. Claeys, Random telegraph signals in silicon-on-insulator metal-oxide-semiconductor transistors. J. Appl. Phys. 75(7), 3647–3653 (1994)
4. K.S. Ralls, W.J. Skocpol, L.D. Jackel, R.E. Howard, L.A. Fetter, R.W. Epworth, D.M. Tennant, Discrete resistance switching in submicrometer silicon inversion layers: individual interface traps and (1/f?) noise. Phys. Rev. Lett. 52(3), 228–231 (1984)
5. R. Huang, X.B. Jiang, S.F. Guo, P.P. Ren, P. Hao, Z.Q. Yu, Z. Zhang, Y.Y. Wang, R.S. Wang, Variability-and reliability-aware design for 16/14nm and beyond technology, in 2017 IEEE International Electron Devices Meeting (IEDM), pp. 12.4.1–12.4.4
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献