In<sub>0.53</sub>Ga<sub>0.47</sub>As-Based nMOSFET Design for Low Standby Power Applications-Reference-Cited by-同舟云学术

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In_0.53Ga_0.47As-Based nMOSFET Design for Low Standby Power Applications

Published:2015-09 Issue:9 Volume:62 Page:2816-2823
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Bhuwalka Krishna K.,Wu Zhenhua,Noh Hyeon-Kyun,Lee Wonsok,Cantoro Mirco,Heo Yeon-Cheol,Jin Seonghoon,Choi Woosung,Kwon Uihui,Maeda Shigenobu,Lee Keun-Ho,Park Young-Kwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7210242/07140748.pdf?arnumber=7140748

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Novel partial punch-through-stopper scheme for substrate leakage optimization of nanosheet field-effect transistors;Microelectronics Journal;2024-01

3. Occurrence of Nonlinear Electron Mobility in GaAs/InxGa1−xAs Coupled Double Quantum Well FET;Lecture Notes in Electrical Engineering;2023-09-03

4. Modeling of inversion layer capacitance of III-V double gate MOSFETs using a neural network-based regression technique;Journal of Computational Electronics;2023-08-19

5. Compact drain current modeling of planar InGaAs quantum well MOSFET;Micro and Nanostructures;2022-09

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