Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning-Reference-Cited by-同舟云学术

Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning

Published:2015-11 Issue:11 Volume:62 Page:3653-3657
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Cho Sung Haeng,Ko Jong Beom,Ryu Min Ki,Yang Jong-Heon,Yeom Hye-In,Lim Sun Kwon,Hwang Chi-Sun,Park Sang-Hee Ko

Funder

Information Technology Research and Development Program through the Ministry of Knowledge and Economy/Korea Evaluation Institute of Industrial Technology

Institute for Information & communications Technology Promotion through the Korean Government within the Ministry of Science, ICT and Future Planning

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7302109/07294642.pdf?arnumber=7294642

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