Gate oxide integrity on ITOX-SIMOX substrates and influence of test device geometry on characterization-Reference-Cited by-同舟云学术

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Gate oxide integrity on ITOX-SIMOX substrates and influence of test device geometry on characterization

Published:2001 Issue:2 Volume:48 Page:307-315
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kawamura K.,Deai H.,Sakamoto H.,Yano T.,Hamaguchi I.,Takayama S.,Nagatake Y.,Tachimori M.,Matsumura A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/19522/00902732.pdf?arnumber=902732

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnetization dependence on dynamic strain in ferromagnetic shape memory Ni–Mn–Ga;Applied Physics Letters;2008-08-11

2. Influence of Oxygen Partial Pressure on Thickness Change of Buried Oxide in Silicon-on-Insulator Structure during High-Temperature Oxidation Processes;Journal of The Electrochemical Society;2006

3. Oxygen profile engineering in silicon by germanium addition and high-temperature annealing;Applied Physics Letters;2003-07-14

4. Technological innovation in low-dose SIMOX wafers fabricated by an internal thermal oxidation (ITOX) process;Microelectronic Engineering;2003-04

5. Phonon transport in 6H silicon carbide;Semiconductor Science and Technology;2002-11-28

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