Influence of Oxygen Partial Pressure on Thickness Change of Buried Oxide in Silicon-on-Insulator Structure during High-Temperature Oxidation Processes-Reference-Cited by-同舟云学术

Influence of Oxygen Partial Pressure on Thickness Change of Buried Oxide in Silicon-on-Insulator Structure during High-Temperature Oxidation Processes

Published:2006 Issue:12 Volume:153 Page:G1078
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kawamura Keisuke,Motooka Teruaki

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference33 articles.

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5. D. Bearden , inProceedings of 2002 IEEE International SOI Conference, p. 6 (2002).

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