Impact of Operational Parameters on dV<sub>DS</sub>/dt of SiC MOSFET and a Scheme for Gate Driver Resistance Selection to Limit dV<sub>DS</sub>/dt-Reference-Cited by-同舟云学术

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Impact of Operational Parameters on dV_DS/dt of SiC MOSFET and a Scheme for Gate Driver Resistance Selection to Limit dV_DS/dt

Published:2024-02-25 Issue: Volume: Page:1159-1165
ISSN:
Container-title:2024 IEEE Applied Power Electronics Conference and Exposition (APEC)
language:
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Author:

Aman Aditya¹,Chanekar Abhishek¹,Anand Sandeep¹,Agarwal Anant²

Affiliation:

1. IIT Bombay,Electrical Engineering,Mumbai,India

2. The Ohio State University,Electrical & Computer Engineering,Columbus,United States

Funder

National Centre for Photovoltaic Research and Education

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10509012/10509018/10509088.pdf?arnumber=10509088

Reference13 articles.

1. Datasheet Driven Switching Loss, Turn-ON/OFF Overvoltage, di/dt, and dv/dt Prediction Method for SiC MOSFET

2. The Effects of PWM With High dv/dt on Partial Discharge and Lifetime of Medium-Frequency Transformer for Medium-Voltage (MV) Solid State Transformer Applications

3. Motors and Generators, Standard MG1 - 2009,2009

4. Comparative Evaluation of Gate Driver and LC-Filter Based dv/dt-Limitation for SiC-Based Motor-Integrated Variable Speed Drive Inverters

5. Digitally Controlled Gate Current Source-Based Active Gate Driver for Silicon Carbide MOSFETs

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