Datasheet Driven Switching Loss, Turn-ON/OFF Overvoltage, di/dt, and dv/dt Prediction Method for SiC MOSFET
Author:
Affiliation:
1. School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9770296/09716826.pdf?arnumber=9716826
Reference53 articles.
1. An Accurate Datasheet-Based Full-Characteristics Analytical Model of GaN HEMTs for Deadtime Optimization
2. Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching, and False Turn-On Conditions
3. Investigation of the Effects of Snubber Capacitors on Turn-on Overvoltage of SiC MOSFETs
4. A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing
5. Characterization and Modeling of a SiC MOSFET's Turn-On Overvoltage
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1. A Quasi-Floating Channel-Based SPICE Model for Improving the Modeling Accuracy of SiC MOSFETs With Multiple Device Structures;IEEE Transactions on Power Electronics;2024-11
2. Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability;IEEE Transactions on Power Electronics;2024-11
3. A Novel Control Strategy for Optimal Tradeoff between Overshoot and Switching Loss Based on Double Closed-Loop Self-Regulating Active Gate Driver;IEEE Transactions on Power Electronics;2024-10
4. Noncontact SiC MOSFET Switching Time Monitoring in DC–DC Converter Using Switching Oscillation Amplitude Feature;IEEE Transactions on Power Electronics;2024-08
5. Calculation and Analysis of the Dynamic Turn-On Process of SiC MOSFET Based on a Piecewise Linearization Method;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-08
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