Suitability of FinFET technology for low-power mixed-signal applications-Reference-Cited by-同舟云学术

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Suitability of FinFET technology for low-power mixed-signal applications

Published:2006 Issue: Volume: Page:
ISSN:
Container-title:2006 IEEE International Conference on IC Design and Technology
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Author:

Parvais B.,Gustin C.,de Heyn V.,Loo J.,Dehan M.,Subramanian V.,Mercha A.,Collaert N.,Rooyackers R.,Jurczak M.,Wambacq P.,Decoutere S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/11070/34953/01669383.pdf?arnumber=1669383

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures;Solid-State Electronics;2016-09

2. Design of low power 3-bit TIQ based ADC by using FinFET Technology;Proceedings of the Second International Conference on Information and Communication Technology for Competitive Strategies - ICTCS '16;2016

3. Simple and accurate approaches to implement the complex trans-conductance suited for time-domain simulators for small-signal and large-signal table-based models;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2010

4. Analog circuits using FinFETs: benefits in speed-accuracy-power trade-off and simulation of parasitic effects;Advances in Radio Science;2007-06-13

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