Simple and accurate approaches to implement the complex trans-conductance suited for time-domain simulators for small-signal and large-signal table-based models

Author:

Homayouni Seyed Majid,Schreurs Dominique,Nauwelaers Bart

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Reference18 articles.

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2. Spectre Circuit Simulator User Guide, January 2004. [Online]. Available: http://www-inst.eecs.berkeley.edu/∼n240/sp06/spectre_user_guide.pdf

3. Root DE, Fan S, Meyer J. Technology independent non quasi-static FET models by direct construction from automatically characterized device data. Twenty-first European Microwave Conference Proceedings, Stuttgart, Germany, September 1991; 927-932.

4. Root DE, Fan S, Meyer J. Technology-independent large-signal fet models: a measurement-based approach to active device modeling. Proceedings of the 15th ARMMS Conference, Bath, England, September 1991; 1-23.

5. Yang AT, Chan CH, Yao JT, Danies RR, Harrang JP. Modeling and simulation of high-frequency integrated circuits based on scattering parameters. Proceedings of the 28th ACM/IEEE Design Automation Conference, San Francisco, California, U.S.A., June 1991; 752-757.

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1. Microwave neural modeling for silicon FinFET varactors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2014-01-29

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