Microwave neural modeling for silicon FinFET varactors-Reference-Cited by-同舟云学术

Microwave neural modeling for silicon FinFET varactors

Published:2014-01-29 Issue:5-6 Volume:27 Page:834-845
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Marinković Zlatica¹,Crupi Giovanni²,Schreurs Dominique M. M.-P.³,Caddemi Alina²,Marković Vera¹

Affiliation:

1. Faculty of Electronic Engineering; University of Niš; 18000 Niš Serbia

2. DICIEAMA; University of Messina; 98166 Messina Italy

3. Electronic Engineering Department; University of Leuven; B-3001 Leuven Belgium

Funder

Serbian Ministry for Education and Science

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jnm.1926/fullpdf

Reference39 articles.

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2. An RF model of the accumulation-mode MOS varactor valid in both accumulation and depletion regions;Song;IEEE Trans Electron Dev,2003

3. Parvais B Delatte P Matsuhashi H Ichikawa F Simon P Schreurs D Small- and large-signal RF characterization of fully-depleted accumulation-mode varactors for low-voltage LC-VCO SOI design IEEE International SOI Conference 2004 168 170

4. A physically based, scalable MOS varactor model and extraction methodology for RF applications;Victory;IEEE Trans Electron Dev,2005

5. Modeling and characterization of VCOs with MOS varactors for RF transceivers;Sameni;EURASIP J Wirel Comm,2006

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