An improved model for substrate in RF SOI MOSFET varactor-Reference-Cited by-同舟云学术

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An improved model for substrate in RF SOI MOSFET varactor

Published:2016-07-07 Issue:2 Volume:30 Page:e2179
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Li Wenjun¹,Chen Xiaochuan¹,Liu Jun¹

Affiliation:

1. Key Laboratory for RF Circuits and Systems, Ministry of Education; Hangzhou Dianzi University; Hangzhou 310037 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference24 articles.

1. Raskin JP SOI technology: an opportunity for RF designers? VLSI technology, systems and application (VLSI-TSA) 2014

2. Design of high-Q varactors for low-power wireless applications using a standard CMOS process;Porret;IEEE J Solid State Circ,1999

3. Modeling of MOS varactors and characterizing the tuning curve of a 5-6 GHz LC VCO;Sameni;Circ Sys,2005

4. Analytical extraction of small and large signal models for FinFET varactors;Crupi;Solid-State Electron,2008

5. Microwave neural modeling for silicon FinFET varactors;Marinkovi;Int J Num Model Electron Network Dev Field,2014

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A nanoscale‐modified junctionless with considerable progress on the electrical and thermal issue;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2018-12-21

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