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Addressing Dynamic Process Changes in High Volume Plasma Etch Manufacturing by Using Multivariate Process Control

  • Published:2010-05 Issue:2 Volume:23 Page:185-193
  • ISSN:0894-6507
  • Container-title:IEEE Transactions on Semiconductor Manufacturing
  • language:
  • Short-container-title:IEEE Trans. Semicond. Manufact.

Author:

Parkinson Blake R.,Lee Hyung,Funk Merritt,Prager Daniel,Yamashita Asao,Sundararajan Radha,Edgar Thomas F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Real-Time Monitoring Framework for Wafer Fabrication Processes With Run-to-Run Variations;IEEE Transactions on Semiconductor Manufacturing;2021-11

2. A novel approach to hedge and compensate the critical dimension variation of the developed-and-etched circuit patterns for yield enhancement in semiconductor manufacturing;Computers & Operations Research;2015-01

3. Systematic procedure to optimize chamber seasoning conditions with optical emission spectroscopy in plasma etching;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-03

4. Multiple input multiple output controller design to match chamber performance in plasma etching for semiconductor manufacturing;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-11
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