A 45-nm RFSOI CMOS Based Compact Doherty Power Amplifier For mm-wave 5G Applications
Author:
Affiliation:
1. Network Business Samsung Electronics,Suwon,S. Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9792218/9792321/09792352.pdf?arnumber=9792352
Reference9 articles.
1. 2.7 A wideband 28GHz power amplifier supporting 8×100MHz carrier aggregation for 5G in 40nm CMOS
2. A 28GHz 41%-PAE linear CMOS power amplifier using a transformer-based AM-PM distortion-correction technique for 5G phased arrays
3. 24.1 A 24-to-30GHz Watt-Level Broadband Linear Doherty Power Amplifier with Multi-Primary Distributed-Active-Transformer Power-Combining Supporting 5G NR FR2 64-QAM with >19dBm Average Pout and >19% Average PAE
4. A 28-GHz SOI-CMOS Doherty Power Amplifier With a Compact Transformer-Based Output Combiner
5. A 24.5–29.5GHz Broadband Parallel-to-Series Combined Compact Doherty Power Amplifier in 28-nm Bulk CMOS for 5G Applications
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