2.7 A wideband 28GHz power amplifier supporting 8×100MHz carrier aggregation for 5G in 40nm CMOS-Reference-Cited by-同舟云学术

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2.7 A wideband 28GHz power amplifier supporting 8×100MHz carrier aggregation for 5G in 40nm CMOS

Published:2017-02 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE International Solid-State Circuits Conference (ISSCC)
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Author:

Shakib Sherif,Elkholy Mohamed,Dunworth Jeremy,Aparin Vladimir,Entesari Kamran

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7866667/7870233/07870252.pdf?arnumber=7870252

Cited by 80 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Compact 19.7- to 43.8-GHz Power Amplifier With 20.3-dBm Psat and 35.5% PAE in 28-nm Bulk CMOS;IEEE Journal of Solid-State Circuits;2024-08

2. A K-Band CMOS Power Amplifier using an Analog Predistortion Linearizer with 22.1 dBm P_sat and 0.9° AM-PM Distortion;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

3. A 26.5-35 GHz High Linearity VGA with an RMS Phase Error of 0.9°-2.8° Utilizing a Novel Hybrid Coupling Technique in 45RFSOI;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

4. A Dual-Path Transformer-Based Multiband Power Amplifier for mm-Wave 5G Applications;IEEE Journal of Solid-State Circuits;2024-06

5. A Ka-Band Ultrawideband Variable Gain Amplifier With Low Phase Variation for 5G Communications;IEEE Microwave and Wireless Technology Letters;2024-05

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