CMOS Based Sub-THz Wireless Transceivers: Issues and Solutions
Author:
Affiliation:
1. KAIST,Department of Electrical and Electronic Engineering,Republic of Korea
Funder
Samsung
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9792218/9792321/09792336.pdf?arnumber=9792336
Reference18 articles.
1. A D-Band Power Amplifier in 65-nm CMOS by Adopting Simultaneous Output Power-and Gain-Matched Gmax-Core
2. A 250-GHz 12.6-dB Gain and 3.8-dBm P sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G max-Core
3. 245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-and 4-way Power Combining
4. A 230–260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak $G_{{\mathrm{max}}}$ -Core
5. Design of High-Gain Sub-THz Regenerative Amplifiers Based on Double-G max Gain Boosting Technique
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