Polysilicon gate enhancement of the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFETs with ultrathin gate oxide
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/18018/00830997.pdf?arnumber=830997
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