Parameterized Comparison of Carbon Nanotube and Graphene Nanoribbon Field Effective Transistor
Author:
Affiliation:
1. Dhirubhai Ambani Institute of Information and Communication Technology,Gandhinagar,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9828864/9828869/09828951.pdf?arnumber=9828951
Reference25 articles.
1. Graphene nano-ribbon field-effect transistors as future low-power devices
2. Conduction Mechanism and Performance Evaluation of Advance Nanoscale Semiconductor Devices
3. Cut Off Frequency Variation by Ambient Heating in Tunneling p-i-n CNTFETs
4. Simulation of Carbon Nanotube based Field Effect Transistor by Varying Gate Oxide Thickness to Explore its Electrical Property and Compare it with Standard Mosfet
5. Impact of dielectric material and oxide thickness on the performance of Carbon Nanotube Field Effect Transistor
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