Simulation of Carbon Nanotube based Field Effect Transistor by Varying Gate Oxide Thickness to Explore its Electrical Property and Compare it with Standard Mosfet
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Published:2021-06-05
Issue:2
Volume:11
Page:1549-1566
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ISSN:2237-0722
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Container-title:Revista Gestão Inovação e Tecnologias
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language:
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Short-container-title:revistageintec
Author:
Reddy Morupuri Satish Kumar
Abstract
Aim: The current and voltage characteristics of CNTFET and MOSFET are simulated by varying their gate oxide thickness ranging from 3.5nm to 11.5nm. Materials and Methods: The electrical conductance of CNTFET (n = 320) was compared with MOSFET (n = 320) by varying gate oxide thickness ranging from 3.5nm to 11.5nm in the NanoHUB© tool simulation environment. Results: CNTFET has significantly higher conductance (12.52 mho) than MOSFET (12.07 mho). The optimal thickness for maximum conductivity was 4nm for CNTFET and 3.5 nm for MOSFET. Conclusion: Within the limits of this study, CNTFET with the gate oxide thickness of 4 nm offers the best conductivity.
Publisher
Centivens Institute of Innovative Research
Cited by
1 articles.
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1. Parameterized Comparison of Carbon Nanotube and Graphene Nanoribbon Field Effective Transistor;2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO);2022-04-28