A High-IP3 Harmonic Tuned Wideband 40 dBm RF Power Amplifier for 5G Applications
Author:
Affiliation:
1. University of Colorado Colorado Springs,Department of Electrical and Computer Engineering,Colorado Springs,CO,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10124873/10124883/10124915.pdf?arnumber=10124915
Reference13 articles.
1. A 23 dBm Gain Shaping Stacked Power Block CMOS Power Amplifier Achieving 36% PAE
2. A 1.7-to-2.7GHz 35–38% PAE Multiband CMOS Power Amplifier Employing a Digitally-Assisted Analog Pre-Distorter (DAAPD) Reconfigurable Linearization Technique
3. Design of a 110 W Wideband Inverse Class-F GaN HEMT Power Amplifier with 65% Efficiency over 100-1000 MHz Bandwidth
4. A Theory for the Prediction of GaAs FET Load-Pull Power Contours
5. Efficient Multisignal 2–4-GHz Power Amplifier With Power Tracking
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1. High-Efficiency. 25 Watts Broadband Power Amplifier for Sub-6 GHz 5G;2024 International Telecommunications Conference (ITC-Egypt);2024-07-22
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