A 23 dBm Gain Shaping Stacked Power Block CMOS Power Amplifier Achieving 36% PAE-Reference-Cited by-同舟云学术

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A 23 dBm Gain Shaping Stacked Power Block CMOS Power Amplifier Achieving 36% PAE

Published:2021-10-19 Issue: Volume: Page:1-8
ISSN:0377-2063
Container-title:IETE Journal of Research
language:en
Short-container-title:IETE Journal of Research

Author:

Gunasegaran Premmilaah¹,Rajendran Jagadheswaran¹,Mariappan Selvakumar²,Sal Hamid Sofiyah¹,Kumar Narendra³

Affiliation:

1. Collaborative Microelectronic Design Excellence Centre (CEDEC), Universiti Sains Malaysia, 11900 Georgetown, Penang, Malaysia

2. QRF Solutions Sdn Bhd, 54-2-4, Wisma Sri Mata, Jalan Van Praagh, 11600 Jelutong, Penang, Malaysia

3. Department of Electrical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia

Funder

Collaborative Research in Engineering, Science and Technology (

CREST Malaysia)

Universiti Sains Malaysia

Ministry of Higher Education Malaysia

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Computer Science Applications,Theoretical Computer Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/03772063.2021.1986149

Reference20 articles.

1. DESIGN OF WIDEBAND LTE POWER AMPLIFIER WITH NOVEL DUAL STAGE LINEARIZER FOR MOBILE WIRELESS COMMUNICATION

2. Wideband LTE Power Amplifier with Integrated Novel Analog Pre-Distorter Linearizer for Mobile Wireless Communications

3. Class-E Power Amplifier with Novel Pre-Distortion Linearization Technique for 4G Mobile Wireless Communications

4. Linearized Dual-Band Power Amplifiers With Integrated Baluns in 65 nm CMOS for a 2$\, \times \,$2 802.11n MIMO WLAN SoC

5. A 2.45-GHz W-level output power CMOS power amplifier with adaptive bias and integrated diode linearizer

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A High-IP3 Harmonic Tuned Wideband 40 dBm RF Power Amplifier for 5G Applications;2023 IEEE Wireless and Microwave Technology Conference (WAMICON);2023-04-17

2. Design of radio frequency power amplifier for 2.45 GHz IoT application using 0.18 µm CMOS technology;Microelectronics International;2022-10-18

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