Sub-6 GHz GaAs pHEMT SPDT Switch with Low Insertion Loss and High Power Handling Capability Using Dual-Gate Technique-Reference-Cited by-同舟云学术

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Sub-6 GHz GaAs pHEMT SPDT Switch with Low Insertion Loss and High Power Handling Capability Using Dual-Gate Technique

Published:2023-04-17 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Wireless and Microwave Technology Conference (WAMICON)
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Author:

Kwon Jaehyun¹,Yoo Jinho¹,Lee Jaeyong¹,Kim Taehun¹,Park Changkun¹

Affiliation:

1. Soongsil University,Intelligent Microwave Systems Lab.,Seoul,Republic of Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10124873/10124883/10124891.pdf?arnumber=10124891

Reference16 articles.

1. Highly Linear K-/Ka-Band SPDT Switch Based on Traveling-Wave Concept in a 150-nm GaN pHEMT Process

2. A K-Band High Power and High Isolation Stacked-FET Single Pole Double Throw MMIC Switch Using Resonating Capacitor

3. 2.4-GHz Absorptive MMIC Switch for Switched Beamformer Application

4. A $Ka$ -Band GaAs MMIC Traveling-Wave Switch With Absorptive Characteristic

5. A 2–6 GHz, 45 dBm Peak Power T/R SPDT Switch for 5G mMIMO Applications

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A FI-SPDT with high isolation based on design method of transfer function;Microelectronics Journal;2024-08

2. A low-supply-voltage high-power-handling stacked SPDT switch based on feedforward capacitors;IEICE Electronics Express;2023-12-10

3. An L-/S-Band SPDT Switch With 30-dBm OP_{1 dB} and 33-dB Isolation in CMOS SOI;IEEE Microwave and Wireless Technology Letters;2023-11

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