An L-/S-Band SPDT Switch With 30-dBm OP1 dB and 33-dB Isolation in CMOS SOI
Author:
Affiliation:
1. School of Microelectronics, Tianjin University, Tianjin, China
2. Chengdu Bowei Electronic Technology Company Ltd., Chengdu, China
Funder
National Key Research and Development Program Project of China
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/9944983/10311057/10260245.pdf?arnumber=10260245
Reference9 articles.
1. Frequency-Reconfigurable SP4T Switch With Plaid Metal Transistors and Forward Body Biasing for Enhanced RON × COFF Characteristics
2. Sub-6 GHz GaAs pHEMT SPDT Switch with Low Insertion Loss and High Power Handling Capability Using Dual-Gate Technique
3. A High-Isolation SPDT T/R switch in 0.18-μm CMOS for Wi-Fi 7 Applications
4. 2.4-GHz Absorptive MMIC Switch for Switched Beamformer Application
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