An L-/S-Band SPDT Switch With 30-dBm OP1 dB and 33-dB Isolation in CMOS SOI-Reference-Cited by-同舟云学术

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An L-/S-Band SPDT Switch With 30-dBm OP_{1 dB} and 33-dB Isolation in CMOS SOI

Published:2023-11 Issue:11 Volume:33 Page:1529-1531
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Wang Xin¹,Ma Genyin¹,Meng Fanyi¹^ORCID,Shi Shilin²,Wang Keping¹^ORCID,Ma Kaixue¹^ORCID,Yeo Kiat Seng¹^ORCID

Affiliation:

1. School of Microelectronics, Tianjin University, Tianjin, China

2. Chengdu Bowei Electronic Technology Company Ltd., Chengdu, China

Funder

National Key Research and Development Program Project of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/10311057/10260245.pdf?arnumber=10260245

Reference9 articles.

1. Frequency-Reconfigurable SP4T Switch With Plaid Metal Transistors and Forward Body Biasing for Enhanced RON × COFF Characteristics

2. Sub-6 GHz GaAs pHEMT SPDT Switch with Low Insertion Loss and High Power Handling Capability Using Dual-Gate Technique

3. A High-Isolation SPDT T/R switch in 0.18-μm CMOS for Wi-Fi 7 Applications

4. 2.4-GHz Absorptive MMIC Switch for Switched Beamformer Application

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Systematic Approach to Mitigate Parasitics for Wide-Band High Isolation CMOS SPDT Switch;2024 IEEE Space, Aerospace and Defence Conference (SPACE);2024-07-22

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