A 280-/300-GHz Three-Stage Amplifiers in 65-nm CMOS With 12-/9-dB Gain and 1.6/1.4% PAE While Dissipating 17.9 mW-Reference-Cited by-同舟云学术

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A 280-/300-GHz Three-Stage Amplifiers in 65-nm CMOS With 12-/9-dB Gain and 1.6/1.4% PAE While Dissipating 17.9 mW

Published:2018-01 Issue:1 Volume:28 Page:79-81
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Park Dae-Woong^ORCID,Utomo Dzuhri Radityo^ORCID,Lam Bao Huu,Hong Jong-Phil^ORCID,Lee Sang-Gug^ORCID

Funder

Pioneer Research Center Program through the National Research Foundation of South Korea

Ministry of Science, ICT and Future Planning

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/8249514/08168414.pdf?arnumber=8168414

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 194-GHz Three-Stage Differential Driver Amplifier Utilizing a Three-Element Embedded Core at Near-fmax Frequencies in 65-Nm CMOS;IEEE Microwave and Wireless Technology Letters;2024-06

2. A D-Band Differential Amplifier With Cross-Couple of Series-Connected Capacitor and Transmission Line-Based Dual-Frequency G _max-Core;IEEE Transactions on Circuits and Systems II: Express Briefs;2024-06

3. H-Band Power Amplifiers in 65-nm CMOS by Adopting Output Power Maximized G _max-Core and Transmission Line-Based Zero-Degree Power Combining Networks;IEEE Journal of Solid-State Circuits;2023-11

4. A novel gain‐boosting structure with Z‐embedding and parallel pre‐embedding network for amplifiers at near‐f_max frequencies;International Journal of Circuit Theory and Applications;2023-05-23

5. A 201- and 283-GHz Dual-Band Amplifier in 65-Nm CMOS Adopting Dual-Frequency $G_{\max }$-Core With Dual-Band Matching;IEEE Transactions on Terahertz Science and Technology;2023-05

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