<i>H</i>-Band Power Amplifiers in 65-nm CMOS by Adopting Output Power Maximized <i>G</i> <sub>max</sub>-Core and Transmission Line-Based Zero-Degree Power Combining Networks-Reference-Cited by-同舟云学术

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H-Band Power Amplifiers in 65-nm CMOS by Adopting Output Power Maximized G _max-Core and Transmission Line-Based Zero-Degree Power Combining Networks

Published:2023-11 Issue:11 Volume:58 Page:3089-3102
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Yun Byeonghun¹^ORCID,Park Dae-Woong²^ORCID,Lee Sang-Gug³^ORCID

Affiliation:

1. Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Fusionopolis, Singapore

2. Department of Semiconductor Engineering, Seoul National University of Science and Technology, Seoul, South Korea

3. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea

Funder

Institute of Information and Communications Technology Planning and Evaluation (IITP) Grant

Korean Government

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/10292770/10230909.pdf?arnumber=10230909

Reference49 articles.

1. Remote gas sensing in full-scale fire with sub-terahertz waves;shimizu;IEEE MTT-S Int Microw Symp Dig,2011

2. THz Medical Imaging: in vivo Hydration Sensing

3. A broadband THz imager in a low-cost CMOS technology

4. CMOS Power-Amplifier Design Perspectives for 6G Wireless Communications

5. 9.4 A 145GHz FMCW-Radar Transceiver in 28nm CMOS

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2. A 194-GHz Three-Stage Differential Driver Amplifier Utilizing a Three-Element Embedded Core at Near-fmax Frequencies in 65-Nm CMOS;IEEE Microwave and Wireless Technology Letters;2024-06

3. A 180–194-GHz Power Amplifier Co-Designed With a Power-Combining End-Fed Slot Antenna Array in 65-nm CMOS;IEEE Transactions on Microwave Theory and Techniques;2024

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