16.8 1GHz GaN-MMIC monolithically integrated MEMS-based oscillators-Reference-Cited by-同舟云学术

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16.8 1GHz GaN-MMIC monolithically integrated MEMS-based oscillators

Published:2015-02 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers
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Author:

Bahr Bichoy W.,Popa Laura C.,Weinstein Dana

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7054075/7062838/07063047.pdf?arnumber=7063047

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TCAD Study on Suppression of Substrate-Induced Degradation in GaN-on-Si Integrated Half-Bridge Circuit by Local Si Lateral Etch;IEEE Transactions on Electron Devices;2023-11

2. The dynamics of MEMS-Colpitts oscillators;Nonlinear Dynamics;2023-08-18

3. 1GHz GaN MEMS Oscillator Based on GaN-on-Si MMIC Technology;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27

4. Class-C BAW Oscillator Achieving a Close-in FOM of 206.5dB at 1kHz with Optimal Tuning for Narrowband Wireless Systems;2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2022-06-19

5. Near-Field-Coupled Bondless BAW Oscillators in WCSP Package with 46fs Jitter;2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2021-06-07

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