1GHz GaN MEMS Oscillator Based on GaN-on-Si MMIC Technology-Reference-Cited by-同舟云学术

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1GHz GaN MEMS Oscillator Based on GaN-on-Si MMIC Technology

Published:2022-11-27 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
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Author:

Xie Zhongwei¹,Zhu Haoshen²,Kang Tangfei¹,Che Wenquan²,Xue Quan²

Affiliation:

1. South China University of Technology,School of Microelectronics,Guangzhou,China

2. South China University of Technology,Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, School of Electronic and Information Engineering,Guangzhou,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10106786/10106791/10106932.pdf?arnumber=10106932

Reference12 articles.

1. A 2GHz 0.25?m SiGe BiCMOS Oscillator with Flip-Chip Mounted BAW Resonator;razafimandimby;Solid-State Circuits Conference 2007 ISSCC 2007,2007

2. Modified Butterworth-Van Dyke circuit for FBAR resonators and automated measurement system

3. 16.8 1GHz GaN-MMIC monolithically integrated MEMS-based oscillators

4. A 76dB?; 1.7GHz 0.18?m CMOS tunable transimpedance amplifier using broad-band current pre-amplifier for high frequency lateral micromechanical oscillators;lavasani;Solid-State Circuits Conference Digest of Technical Papers (ISSCC),2010

5. Gallium Nitride as an Electromechanical Material

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