17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization-Reference-Cited by-同舟云学术

17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization

Published:2016-01 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Solid-State Circuits Conference (ISSCC)
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Author:

Song Taejoong,Rim Woojin,Park Sunghyun,Kim Yongho,Jung Jonghoon,Yang Giyong,Baek Sanghoon,Choi Jaeseung,Kwon Bongjae,Lee Yunwoo,Kim Sungbong,Kim Gyuhong,Won Hyo-Sig,Ku Ja-Hum,Paak Sunhom Steve,Jung ES,Park Steve Sungho,Kim Kinam

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7405163/7417881/7418029.pdf?arnumber=7418029

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