7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers-Reference-Cited by-同舟云学术

7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers

Published:2016-01 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Solid-State Circuits Conference (ISSCC)
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Author:

Kang Dongku,Jeong Woopyo,Kim Chulbum,Kim Doo-Hyun,Cho Yong Sung,Kang Kyung-Tae,Ryu Jinho,Kang Kyung-Min,Lee Sungyeon,Kim Wandong,Lee Hanjun,Yu Jaedoeg,Choi Nayoung,Jang Dong-Su,Ihm Jeong-Don,Kim Doogon,Min Young-Sun,Kim Moo-Sung,Park An-Soo,Son Jae-Ick,Kim In-Mo,Kwak Pansuk,Jung Bong-Kil,Lee Doo-Sub,Kim Hyunggon,Yang Hyang-Ja,Byeon Dae-Seok,Park Ki-Tae,Kyung Kye-Hyun,Choi Jeong-Hyuk

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7405163/7417881/7417941.pdf?arnumber=7417941

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