94% power-recycle and near-zero driving-dead-zone N-type low-dropout regulator with 20mV undershoot at short-period load transient of flash memory in smart phone-Reference-Cited by-同舟云学术

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94% power-recycle and near-zero driving-dead-zone N-type low-dropout regulator with 20mV undershoot at short-period load transient of flash memory in smart phone

Published:2018-02 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Solid - State Circuits Conference - (ISSCC)
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Author:

Chen Wei-Chung,Huang Tzu-Chi,Chiu Chao-Chang,Chang Chih-Wei,Hsu Kuo-Chun

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8304413/8310156/08310371.pdf?arnumber=8310371

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An NMOS LDO With TM-MOS and Dynamic Clamp Technique Handling Up To Sub-10-μs Short-Period Load Transient;IEEE Journal of Solid-State Circuits;2024-02

2. Reverse voltage protection circuits for power MOSFETs in low dropout power applications;IEICE Electronics Express;2022-10-10

3. An area-efficient automotive LDO with scalable maximum load current exhibits excellent response to line and load transients;AEU - International Journal of Electronics and Communications;2022-05

4. A Fully Integrated High-Power-Supply-Rejection Linear Regulator With an Output-Supplied Voltage Reference;IEEE Transactions on Circuits and Systems I: Regular Papers;2020-11

5. A 7-nm All-Digital Leakage-Current-Supply Circuit for Analog LDO Dropout Voltage Reduction;IEEE Solid-State Circuits Letters;2019-12

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